Single Phase Half Controlled Bridge Modules with Free Wheeling Diode--SIRECTIFIER

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型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style	Datasheet
	IT			VDRM	ITSM	VTO	rT	dv/dt	TVJM	RthJC
	ITRMS	ITVM @TC		/VRRM	45°C/10ms	VTO	rT	dv/dt	TVJM	per chip
	A	A	°C	V	A	V	mΩ	V/μs	°C	K/W
S1PHB15G08		15	85	800	190	1.0	40	1000	125	2.40	Fig.13	PDF
S1PHB15G12		15	85	1200	190	1.0	40	1000	125	2.40	Fig.13	PDF
S1PHB15G14		15	85	1400	190	1.0	40	1000	125	2.40	Fig.13	PDF
S1PHB15G16		15	85	1600	190	1.0	40	1000	125	2.40	Fig.13	PDF
S1PHB15G18		15	85	1800	190	1.0	40	1000	125	2.40	Fig.13	PDF
S1PHB28G18		28	85	800	300	0.9	15	1000	125	1.40	Fig.13	PDF
S1PHB28G12		28	85	1200	300	0.9	15	1000	125	1.40	Fig.13	PDF
S1PHB28G14		28	85	1400	300	0.9	15	1000	125	1.40	Fig.13	PDF
S1PHB28G16		28	85	1600	300	0.9	15	1000	125	1.40	Fig.13	PDF
S1PHB28G18		28	85	1800	300	0.9	15	1000	125	1.40	Fig.13	PDF
S1PHB36G08		36	85	800	320	0.85	13	1000	125	1.15	Fig.13	PDF
S1PHB36G12		36	85	1200	320	0.85	13	1000	125	1.15	Fig.13	PDF
S1PHB36G14		36	85	1400	320	0.85	13	1000	125	1.15	Fig.13	PDF
S1PHB36G16		36	85	1600	320	0.85	13	1000	125	1.15	Fig.13	PDF
S1PHB36G18		36	85	1800	320	0.85	13	1000	125	1.15	Fig.13	PDF
S1PHB40G08		40	85	800	360	0.85	12	1000	125	1.00	Fig.13	PDF
S1PHB40G12		40	85	1200	360	0.85	12	1000	125	1.00	Fig.13	PDF
S1PHB28G14		40	85	1400	360	0.85	12	1000	125	1.00	Fig.13	PDF
S1PHB28G16		40	85	1600	360	0.85	12	1000	125	1.00	Fig.13	PDF
S1PHB28G18		40	85	1800	360	0.85	12	1000	125	1.00	Fig.13	PDF

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