绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs)

NPT技术的IGBT模块NPT IGBT Modules (None Punch Through Technology)

型号 TYPE	电气特性Electrical Characteristics										封装外形 Package Style
	IGBT					反向二极管 Inverse Diode			RthJC	内部电路Circuit
	VCES	IC25 @TC=25°C	IC80 @TC=80°C	VCEsat @25°C typ	EOFF @125°C typ.	IF @TC=80°C	VF @TC=25°C typ	tr
	V	A	A	V	mJ	A	V	ns	K/W
SII50N06	600	75	50	1.95	1.0	50	1.25	9	0.440	1	Fig.1
SII75N06	600	100	75	1.95	2.4	75	1.25	22	0.350	1	Fig.1
SII100N06	600	130	100	1.95	2.9	100	1.25	10	0.280	1	Fig.1
SII150N06	600	180	150	1.95	4.6	150	1.25	25	0.210	1	Fig.26
SII200N06	600	230	200	1.95	6.3	200	1.25	43	0.170	1	Fig.26
SII300N06	600	375	300	1.95	11.0	300	1.25	69	0.100	1	Fig.26
SID50N06	600	75	50	1.95	1.0	50	1.25	9	0.440	2	Fig.1
SID75N06	600	100	75	1.95	2.4	75	1.25	22	0.350	2	Fig.1
SID100N06	600	130	100	1.95	2.9	100	1.25	10	0.280	2	Fig.1
SID150N06	600	180	150	1.95	4.6	150	1.25	25	0.210	2	Fig.26
SID200N06	600	230	200	1.95	6.3	200	1.25	43	0.170	2	Fig.26
SID300N06	600	375	300	1.95	11.0	300	1.25	69	0.100	2	Fig.26
SDI50N06	600	75	50	1.95	1.0	50	1.25	9	0.440	3	Fig.1
SDI75N06	600	100	75	1.95	2.4	75	1.25	22	0.350	3	Fig.1
SDI100N06	600	130	100	1.95	2.9	100	1.25	10	0.280	3	Fig.1
SDI150N06	600	180	150	1.95	4.6	150	1.25	25	0.210	3	Fig.26
SDI200N06	600	230	200	1.95