肖特基势垒二极管Schottky Barrier Diodes

高结温低漏电流肖特基势垒二极管High T_jm Low I_RRM Schottky Barrier Diodes

T_j = -65°C ~ +175°C, T_jm = +175°C

型号 　TYPE	电气特性Electrical Characteristics							封装外形 Package Style
	VR=VRRM	IFAV	IFSM	IR at VR=VRRM		VFmax at IFM
				25°C	125°C
	V	A	A	mA	mA	V	A
MBR540	40	5.0	175	0.50	33	0.55	5	TO-220AC
MBR560	60	5.0	175	0.50	33	0.70	5	TO-220AC
MBR580	80	5.0	120	0.05	10	0.85	5	TO-220AC
MBR5100	100	5.0	120	0.05	10	0.85	5	TO-220AC
NEW MBR5150	150	5.0	120	0.05	15	0.95	5	TO-220AC
NEW MBR5200	200	5.0	120	0.05	15	0.95	5	TO-220AC
MBR730	30	7.5	150	0.10	15	0.57	7.5	TO-220AC
MBR735	35	7.5	150	0.10	15	0.57	7.5	TO-220AC
MBR740	40	7.5	150	0.10	15	0.57	7.5	TO-220AC
MBR745	45	7.5	150	0.10	15	0.57	7.5	TO-220AC
MBR750	50	7.5	150	0.50	15	0.75	7.5	TO-220AC
MBR760	60	7.5	150	0.50	15	0.75	7.5	TO-220AC
MBR830	30	8.0	150	0.10	15	0.70	8	TO-220AC
MBR835	35	8.0	150	0.10	15	0.70	8	TO-220AC
MBR840	40	8.0	150	0.10	15	0.70	8	TO-220AC
MBR845	45	8.0	150	0.10	15	0.70	8	TO-220AC
MBR850	50	8.0	150	0.10	15	0.80	8	TO-220AC
MBR860	60	8.0	150	0.10	15	0.80	8	TO-220AC
MBR870	70	8.0	125	0.10	7	0.85	8	TO-220AC
MBR880	80	8.0	125	0.10	7	0.85	8	TO-220AC
MBR890