绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs)

IGBT分立器件Discrete IGBTs

型号 TYPE	电气特性Electrical Characteristics							封装外形 Package Style
	VCES	IC25 @TC=25°C	IC90 @TC=90°C	VCEsat @25°C typ.	EOFF @125°C typ.	RthJC	内部电路 Circuit
	V	A	A	V	mJ	K/W
SG7N06P	600	14	7	1.5	0.6	2.30	1	TO-220AB
SG7N06DP	600	14	7	1.5	0.6	2.30	2	TO-220AB
SG12N06P	600	24	12	2.1	0.8	1.25	1	TO-220AB
SG12N06DP	600	24	12	2.1	0.8	1.25	2	TO-220AB
SG12N06T	600	24	12	2.1	0.8	1.25	1	TO-247AD
SG12N06DT	600	24	12	2.1	0.8	1.25	2	TO-247AD
SG23N06T	600	48	24	2.1	0.6	0.83	1	TO-247AD
SG23N06DT	600	48	24	2.1	0.6	0.83	2	TO-247AD
SG50N06T	600	75	50	2.5	4.2	0.62	1	TO-247AD
SG50N06DT	600	75	50	2.5	4.2	0.62	2	TO-247AD
SG50N06S	600	75	50	2.5	4.2	0.50	1	SOT-227
SG50N06DS	600	75	50	2.5	4.2	0.50	2	SOT-227
SG50N06D2S	600	75	50	2.5	4.2	0.50	3	SOT-227
SG50N06D3S	600	75	50	2.5	4.2	0.50	4	SOT-227
SG200N06S	600	200	100	2.1	14.4	0.21	1	SOT-227
SG15N12P	1200	30	15	3.2	3.5	0.83	1	TO-220AB
SG15N12DP	1200	30	15	3.2	3.5	0.83	2	TO-220AB
SG20N12T	1200	40	20	2.0	9.5	0.83	1	TO-247AD
SG20N12DT	1200	40	20	2.0	9.5	0.83	2	TO-247AD
SG25S12T	1200	46	25	2.35	2.5	0.83	1	TO-247AD
SG25S12DT	1200	46	25	2.35	2.5	0.83	2	TO-247AD
SG35N12T	1200	70	35	3.3	8.0	0.42	1	TO-247AD
SG35N12DT	1200	70	35