WHAT'S HOT

Dec.2004, Sirectifier Semiconductors developed 150A - 400A / 600V, 1200V, 1700V  NPT & SPT IGBT Modules

May.2004, Sirectifier Semiconductors developed 800A Thyristor Modules 

March.2004, Sirectifier Semiconductors developed 500A Thyristor Modules 

Jun.2003, Sirectifier Semiconductors developed 50~145A/600V, 1200V, 1700V SPT IGBT Modules in standard package

Jun.2003, Sirectifier Semiconductors developed 50~145A/600V, 1200V, 1700V NPT IGBT Modules in standard package

March.2003, Sirectifier Semiconductors developed discrete IGBT in package styles of TO-263(D2PAK), TO-220AB, TO-247AD, SOT-227(ISOTOP)

March.2003, Sirectifier Semiconductors developed SOT-227(ISOTOP) package style

Dec.2002,Sirectifier Semiconductors developed Single Phase Bridge Rectifiers in package style of GBJ(RS6M)

Dec.2002, Sirectifier Semiconductors developed Ultra Fast Recovery Epitaxial Diodes in package styles of TO-263(D2PAK), TO-220AB, TO-220AC, TO-247AD, TO-247AC

July 2002,  Sirectifier Semiconductors developed GaAs Schottky Barrier Rectifiers in package styles of TO-263(D2PAK), TO-220AB, TO-220AC

March.2002, Sirectifier Semiconductors developed 175ºC High T jm and Low I R Schottky Barrier Rectifiers in package styles of TO-263(D 2 PAK), TO-220AB, TO-220AC, TO-247AD, TO-247AC

March.2002,  Sirectifier Semiconductors developed Low VF Schottky Barrier Rectifiers in package styles of TO-263(D2PAK), TO-220AB, TO-220AC, TO-247AD, TO-247AC